Patents

Our research has led to a portfolio of issued patents spanning magnetic memory technologies, spintronic devices, and advanced magnetic sensing. These inventions translate fundamental research in magnetism and spintronics into device concepts with clear technological and industrial relevance.

Magnetic Memory Technologies

Magnetoelectronic Device Based on Colossal Magnetoresistive Thin Films
US Patent 7,684,147
This patent covers magnetoelectronic devices utilizing colossal magnetoresistive (CMR) thin films. The invention addresses device architectures and operating principles that exploit large resistance changes in response to magnetic fields, enabling memory and logic functionalities based on strongly correlated electron systems.

Multi-State Magnetic Memory Device
US Patent 10,204,678
This invention introduces a magnetic memory concept capable of supporting multiple stable resistance or magnetic states within a single device element. Such multi-state operation goes beyond binary storage and enables higher information density and novel memory architectures.

Magnetic Sensor Technologies

Planar Hall Effect Sensors
US Patent 10,921,389
This patent describes magnetic sensors based on the planar Hall effect, focusing on device structures and operation schemes that enable sensitive, compact, and scalable magnetic field detection suitable for a wide range of applications.

High-Resolution Planar Hall Effect Sensors Having Plural Orientations and Method of Operating the Same to Measure Plural Magnetic Field Components
US Patent 9,606,195
This invention extends planar Hall sensing to multi-axis magnetic field detection by employing sensors with different orientations. It enables simultaneous measurement of multiple magnetic field components with high spatial resolution, supporting advanced sensing and diagnostic applications.

Compensating for an Electromagnetic Interference–Induced Deviation of an Electron Beam
US Patent 11,276,545
This patent addresses the detection and compensation of electromagnetic interference effects that cause deviations in electron beams. The invention is relevant to high-precision systems where magnetic disturbances must be monitored and corrected in real time.