- Applied Physics Letters: A four-state magnetic tunnel junction switchable with spin-orbit torques
- phys.org : A four-state magnetic tunnel junction for novel spintronics applications
- Applied Physics Letter: Stabilization of exponential number of discrete remanent states with localized spin–orbit torques
- See BIU coverage with many press links
- In addition listen to an audio interview in Hebrew
- Applied Physics Letters: Towards a six-state magnetic memory element
- Physics ORG : Researches design six-state magnetic memory
- It Business Edge : Here Come the Memory Wars
- M-RAM info : Israeli researchers develop six-state magnetic memory elements
- The Register : Magnetic memory boffins unveil six-state storage design
- Ynet : מחקר: זיכרון מגנטי בעל שישה מצבים
- Investigadores diseñan una memoria magnética de seis estados
- C*News : Впервые в истории создана память с 6 битами на ячейку